Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy
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چکیده
Core-level intensities for Si 2p , Si 2s , O 1s , and N 1s were measured by x-ray photoelectron spectroscopy in bulk samples of silicon, SiO2 and Si3N4. A complete and consistent set of intensity ratios is given and applied for calculations of thickness and stoichiometry in thin Si/oxide/nitride layers, which can be used for gate dielectrics in advanced metal–oxide–semiconductor field-effect transistor fabrication. © 1999 American Institute of Physics. @S0003-6951~99!03037-5#
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تاریخ انتشار 1999